PART |
Description |
Maker |
MM3Z47VS |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
MMBTA92 |
Epitaxial Planar Die Construction
|
SHIKE Electronics
|
2KBP10M |
Glass Passivated Die Construction
|
Mospec Semiconductor
|
DXO885915-5 |
Planar Resonator Construction
|
SYNERGY MICROWAVE CORPO...
|
SB20100 |
Guard Ring Die Construction for Transient Protection
|
Sangdest Microelectroni...
|
TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
GBS |
Vitreous Resistors with Corrugated Ribbon, All welded construction, High power rating up to 1000 Watt, Corrugated ribbon construction aids rapid cooling
|
Vishay
|
1N965 JANTX1N957B-1 1N960 1N985 1N963 1N967 JANTXV |
METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 24 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 10 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 56 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 MVSTBW 2,5/21-ST 12 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA Zener Voltage Regulator Diode RES 348-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-1206 TR-7-PA METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION
|
MICROSEMI CORP-LAWRENCE Microsemi, Corp. MICROSEMI[Microsemi Corporation] http://
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1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE (1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction) IC REG VOLT 4.8V 240MA SOT-23 Rectifiers(Rugged glass package/ using a high temperature alloyed construction) Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器(坚固的玻璃封装,采用高温合金建设 Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
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PHILIPS[Philips Semiconductors] http:// NXP Semiconductors N.V.
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BZV85C51 BZV85C56 BZV85C5V1 BZV85C5V6 BZV85200 BZV |
SILICON PLANAR POWER ZENER DIODES 80mW, Fixed-Gain, DirectDrive, Stereo Headphone Amplifier with Shutdown ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% surface mount silicon Zener diodes 表面贴装硅稳压二极管
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GOOD-ARK[GOOD-ARK Electronics] Central Semiconductor, Corp. NXP Semiconductors N.V.
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